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| savantic semiconductor product specification silicon npn power transistors 2SC2970 description with to-66 package high voltage, high speed low saturation voltage applications for switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t a =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a p t total power dissipation t c =25 40 w t j junction temperature 175 t stg storage temperature -55~175 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2970 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ; i b =0 200 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 300 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.4a 1.0 v v besat base-emitter saturation voltage i c =4a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =300v ;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =2a ; v ce =5v 15 savantic semiconductor product specification 3 silicon npn power transistors 2SC2970 package outline fig.2 outline dimensions |
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